Invited Speakers

Invited Speakers

Growth and Related Technologies

Diana Huffaker, UCLA, USA

Patterned III-V nanopillars: a platform for integrated optoelectronic devices

Hiroshi Fujioka, The University of Tokyo, Japan

Large area flexible devices based on group-III nitrides

Masamitu Takahasi, Japan Atomic Energy Agency, Japan

In situ X-ray measurement of changes in buried structure during crystal growth

High-Frequency and High-Power Devices

Kazuhiro Mochizuki, AIST/Hitachi, Japan

Vertical GaN bipolar devices: gaining competitive advantage from photon recycling

Bo Shen, Peking University, China

Epitaxial growth of GaN-based heterostructures of high quality on Si substrates using a large lattice-mismatch induced stress control technology

Man Hoi Wong, NICT, Japan

Measurement of channel temperature in Ga₂O₃ MOSFETs

Photonic Devices

Grégory Maisons, mirSense, France

Monolithic integration of a widely-tunable mid-infrared source based on DFB QCL array and echelle grating

Yoshitaka Okada, The University of Tokyo, Japan

Current trends in high-efficiency III-V nanostructured solar cells

Ryo Nakao, NTT, Japan

Epitaxial growth on lattice-mismatched substrate for high performance lasers

Johann P. Reithmaier, University of Kassel, Germany

1.5 µm quantum dot lasers for data and telecom applications

Physics, Spintronics, and Novel Device Concepts

Nitin Samarth, Penn State University, USA

Topological spintronics

Pauline Simonet, ETH Zurich, Switzerland

From charge detection to Coulomb drag in hybrid graphene/GaAs devices

Thomas Schäpers, Forschungszentrum Juelich, Germany

Spintronics with semiconductor nanowires

Nanocharacterization and Nanostructures

Oded Millo, The Hebrew University of Jerusalem, Israel

Electronic properties of chalcogenide semiconductor nanostructures and thin-films

E.P.A.M. (Erik) Bakkers, Eindhoven University of Technology, the Netherlands

Crossed InSb nanowire junctions for Majorana operations

Kerstin Volz, Philipp University of Marburg, Germany

Interface formation in semiconductor heterostructures at atomic resolution

GaN and Related Semiconductors

Shu Yang, Hong Kong University of Science and Technology, Hong Kong

Performance enhancement and characterization techniques for GaN power devices

Jun Suda, Kyoto University, Japan

Characterization of n-type and p-type GaN layers grown on free-standing GaN substrates

Shigefusa Chichibu, Tohoku University, Japan

Spatio-time-resolved cathodoluminescence study on high AlN mole fraction Al_xGa_1-xN structures grown by metalorganic vapor phase epitaxy

Oxide Semiconductors

Takahisa Omata, Osaka University, Japan

Ternary and quaternary wurtzite-type oxide semiconductors: β-CuGaO₂ and its related materials

Masaki Nakano, The University of Tokyo, Japan

Properties and functionalities of organic-oxide heterointerfaces

John Robertson, Cambridge University, United Kingdom

Band offsets of oxide, 3D and 2D semiconductors and their implications

Nanocarbon/Novel 2D Materials and Devices

Young-Hee Lee, Sungkyunkwan University, Korea

What is unique in 2D-layered materials?

Byoung Hun Lee, Gwangju Institute of Science and Technology, Korea

Graphene for digital logic applications

Tomoki Machida, The University of Tokyo, Japan

Quantum transport in van der Waals junctions of graphene and 2D materials

Organic Semiconductors and Flexible Materials

Takashi Minakata, Asahi Kasei E-Materials Corporation/CEREBA, Japan

Challenges for ultra-thin and highly flexible OLEDs fabricated by roll to roll process

Dietmar Knipp, Jacobs University Bremen, Germany

Scaling of organic thin-film transistors and circuits

Liyuan Han, NIMS, Japan

Efficient and stable large-area perovskite solar cells